Drain bias effects on statistical variability and reliability and related subthreshold variability in 20-nm bulk planar MOSFETs

Drain Bias Effects on Statistical Variability and Reliability and Related Subthreshold Variability in 20-nm Bulk Planar MOSFETs

Statistical variability and reliability due to random discrete dopants (RDD), gate line edge roughness (LER), metal gate granularity and N/PBIT associated random charge trapping has limited the progressive scaling of bulk planar MOSFETs beyond the 20-­‐nm technology ...

Assessment of Global Variability in UTBB MOSFETs in Subthreshold Regime

The global variability of ultra-thin body and buried oxide (UTBB) MOSFETs in subthreshold and off regimes of operation is analyzed. The variability of the off-state drain current, subthreshold slope, drain-induced barrier lowering (DIBL), gate leakage current, threshold voltage and their correlations are considered. Two threshold voltage extraction techniques were used. It is shown that the tra...

Evaluation of statistical variability in 32 and 22 nm technology generation LSTP MOSFETs

0038-1101/$ see front matter 2009 Elsevier Ltd. A doi:10.1016/j.sse.2009.03.008 * Corresponding author. E-mail addresses: [email protected] (B. C (S. Roy), [email protected] (A.R. Brown), A.Aseno The quantitative evaluation of the impact of key sources of static and dynamic statistical variability (SV) are presented for LSTP nMOSFETs corresponding to 32 nm and 22 nm technology generat...

Impact of PVT variability on 20 nm FinFET standard cells

Climate Variability Impacts on Land Use and Livelihoods in Drylands

This edited volume is devoted to the examination of the implications of the inevitable changes wrought by global change on the welfare and livelihoods of tens of millions of people who live in dryland regions. Global change is more than just climate change and the ramifications of changing trade patterns (geopolitical and economic aspects), the shift to the market economy, demographic factors (...